Broad area quantum cascade lasers operating in pulsed mode above 100 ℃ at λ ～ 4.7μm

• 作 者: Yue Zhao Fangliang Yan Jinchuan Zhang Fengqi Liu Ning Zhuo Junqi Liu Lijun Wang Zhanguo Wang
• 机 构: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of S
• 出 处: Journal of Semiconductors
• 发表日期: 2017年07期
• 关键词: high peak power quantum cascade laser interface roughness

We demonstrate a broad area(400 μm) high power quantum cascade laser(QCL). A total peak power of 62 W operating at room temperature is achieved at λ~ 4.7 μm. The temperature dependence of the peak power characteristic is given in the experiment, and also the temperature of the active zone is simulated by a finite-elementmethod(FEM). We find that the interface roughness of the active core has a great effect on the temperature of the active zone and can be enormously improved using the solid source molecular beam epitaxy(MBE) growth system.

The total dependence of the peak power characteristic is given in the experiment. A total peak power of 62 W operating at room temperature is achieved at λ ~ 4.7 μm. , and also the temperature of the active zone is simulated by a finite-element method (FEM). We find that the interface roughness of the active core has a great effect on the temperature of the active zone and can be enormously improved using the solid source molecular beam epitaxy (MBE) growth system.