La-doped TiO_2 thin films on titanium substrates were prepared by the sol–gel method with titanium tetrachloride as a precursor and La_2O_3 as a source of lant
We proposed a novel Al Ga N/Ga N enhancement-mode(E-mode) high electron mobility transistor(HEMT) with a dual-gate structure and carried out the detailed numeri
This paper presents a fully integrated CMOS filterless class D amplifier that can directly hook up lithium battery in mobile application The proposed amplifier
In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel fieldeffect transistor(TFET) has been made using distinct device g