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本文讨论了亚阈值区域的电子输运特性和实验研究方法.首先描述一个用于亚阈值区域电荷输运的由分布参数表示的MOSFET普遍形式的四端等效网络.用电流连续方程和等效的泊松方程导出交流小信号的普遍解和近似解.采用锁相放大技术测量沟道的导纳,结合准确计算的C_I和C_D,给出了MOSFET亚阈值区域沟道中的电子有效迁移率μ_(eff)与反型层电子浓度N_(inv)的关系.发现在亚阈值区域,随N_(inv)减小μ_(eff)有所增加,并对这一现象给予了讨论.
In this paper, we discuss the electron transport properties and experimental methods in the sub-threshold region.Firstly, we describe a quadrivalent equivalent network of MOSFETs in terms of distribution parameters for sub-threshold region charge transport. Poisson’s equation is used to derive the universal solution and the approximate solution of the AC small signal.The channel admittance is measured by the phase-locked amplification technique, and the effective electron mobility in the sub-threshold channel of the MOSFET is given in combination with the accurate C_I and C_D. (eff) and inversion layer electron concentration (N_ (inv)), we found that in the sub-threshold region, the decrease of μ_ (eff) with N_ inv increases, and this phenomenon is discussed.