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本文对BF_2~+、AS~+注入的多晶硅膜进行了快速热退火研究。结果表明;离子注入多晶硅的快速热退火可以得到优于常规热退火的电学性能.选择快速热退火条件可以控制多晶硅中的杂质分布;退火时的氮气保护能够抑制杂质的损失.多晶硅中杂质的分布由杂质在晶粒内部及沿晶粒边界的扩散速率所决定.
In this paper, BF_2 ~ +, AS ~ + polycrystalline silicon films were annealed by rapid thermal annealing. The results show that the rapid thermal annealing of ion implanted polycrystalline silicon can get better electrical properties than conventional thermal annealing.The rapid thermal annealing conditions can be used to control the impurity distribution in polycrystalline silicon.The nitrogen protection during annealing can restrain the loss of impurities.The distribution of impurities in polycrystalline silicon Determined by the rate of diffusion of impurities within and along the grain boundaries.