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根据缺陷化学理论和半导体表面化学吸附理论，对体电导和表面电导分别提出了两个简化模型──单电离氧空位模型和一维积累层模型，解释了Ｇａ２Ｏ３薄膜在两个不同温区的不同的气体敏感特性。理论与实验结果的一致，表明了这两个简化模型的正确性和有效性。
According to the defect chemistry theory and the theory of semiconductor surface chemisorption, two simplified models for the bulk conductance and the surface conductance are presented respectively: the single ionization oxygen vacancy model and the one-dimensional accumulation model, which explain the difference of Ga2O3 film in two different temperature regions Gas-sensitive properties. The agreement between the theoretical and experimental results shows that the two simplified models are correct and effective.