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采用Sol-gel方法在生长有LNO3的Si(100)衬底上制备了掺Mn的PbZr0.5Ti0.5O3铁电薄膜(PMZT)。PMZT薄膜具有优良的铁电性。在外加电场下观察到了非对称剩余极化翻转行为。这种剩余极化的翻转不对称随着锰掺杂浓度的增加而变大,从而表明极化过程中产生的内建偏压电场是由Mn的掺杂引起的。当薄膜厚度保持不变时候,PMZT薄膜的剩余极化(Pr)和平均矫顽电场(Ec)随着锰掺杂浓度的增大而减小。在低频下,PMZT薄膜的介电常数随着锰的掺杂浓度的增加而减小。瞬时电流随着时间的呈指数衰减,最后到达饱和的稳态值。样品的漏电流密度随着电压的增加而近似地线性增加,显示出欧姆特性。在相同电压下,漏电流密度随着Mn掺杂浓度的增加而增加。
A Mn-doped PbZr0.5Ti0.5O3 ferroelectric thin film (PMZT) was prepared on a Si (100) substrate grown on LNO3 by Sol-gel method. PMZT film has excellent ferroelectricity. Asymmetric remnant polarization reversal behavior was observed under applied electric field. The inversion asymmetry of this remanent polarization increases with increasing Mn doping concentration, indicating that the built-in bias electric field generated during polarization is caused by the doping of Mn. The residual polarization (Pr) and the average coercive field (Ec) of PMZT thin films decrease with the increase of Mn doping concentration when the film thickness remains unchanged. At low frequency, the dielectric constant of PMZT thin films decreases with the increase of doping concentration of Mn. The instantaneous current decays exponentially over time, finally reaching a steady state value of saturation. The leakage current density of the samples increases approximately linearly with increasing voltage, showing ohmic characteristics. At the same voltage, the leakage current density increases with increasing Mn doping concentration.