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对射频反应性溅射Cd In合金靶制备的透明导电CdIn2 O4薄膜 ,研究了基片温度及沉积后在氩气流中退火对薄膜的透射、反射和吸收光谱 ,光学常数和载流子浓度的影响。结果表明 :提高基片温度减少了薄膜的载流子浓度 ,退火增加了薄膜的载流子浓度。随着基片温度提高 ,薄膜折射率n和消光系数κ的短波峰将逐渐蓝移 ,而退火使其出现红移。基片温度和退火对薄膜光学常数的影响与其对薄膜载流子浓度的影响是一致的。在制备CdIn2 O4这样一种对于沉积方法和沉积条件极为敏感的透明导电薄膜的沉积过程中 ,这一现象对于实时监控具有极为重要的意义。
The transparent conductive CdIn 2 O 4 films prepared by RF reactive sputtering of Cd In alloy targets were studied for the influence of the substrate temperature and the annealing in argon flow on the transmission, reflection and absorption spectra, optical constants and carrier concentration of the films after deposition . The results show that increasing the substrate temperature decreases the carrier concentration of the film and annealing increases the carrier concentration of the film. As the temperature of the substrate increases, the short-wavelength peaks of the refractive index n and the extinction coefficient κ of the thin film will gradually blue-shift, and the red-shift will occur due to annealing. The effects of substrate temperature and annealing on the optical constants of the films are consistent with their effects on the film carrier concentration. This phenomenon is of crucial importance for real-time monitoring during the deposition of CdIn 2 O 4, a transparent conductive film that is extremely sensitive to deposition methods and deposition conditions.