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研究干氧和湿氧(95℃H_2O)氧化膜厚度在0.10～1.0μ,温度在920℃～1200℃的范围内重掺杂硅氧化特性,研究硅掺硼(1×10~(16)～2.5×10~(20)cm~(-3))或掺磷(4×10~(15)～1.5×10~(20)cm(-3)),以及这两种元素在硅表面的淀积。当硼浓度大于1×10~(20)/cm~3的情况,所有温度下氧化速率增加,而干氧氧化时这种影响最明显。1000℃以上,P掺硅氧化速率增加没有这样快,而920下,P的浓度1×10~(19)cm~(-3)或更高,结果使氧化速率有明显的增加,磷掺杂的影响在湿氧中最明显,这个结果可以用改硅热氧化时杂质再分布来园满地介释。这些考虑还能得到其他杂质重掺杂影响氧化速率的试验值。 高温度下，硅在各种氧化气氛中反应生成SiO_2,单晶硅热氧化的动力学是最近几篇论文的题目（1-5）。这些论文作者报导了起过所研究的浓度范围时氧化速率不依赖于体掺杂浓度。受主杂质和花主杂质的浓度从很低的值（本证硅）到大概象1×10~(20)cm~(-3)那样高，然而还要注意，氧化杂质浓度大于10~（20）cm~(-3)的硅表面时，氧化速率经常偏离标准值为6或7。对于大部分偏差用做器件的扩散工艺的样品来发现的。近来，发展表面控制器件和集成电路中哇氧化的作用日益重要，同时精密控制氧化层的厚度变得更有兴趣（8，9）。因此，着于研究决定对掺杂?
The effects of silicon doping with boron (1 × 10 ~ (16) ~ (-1)) on the oxidation properties of heavily doped silicon oxide films were investigated in the range of 0.10-1.0μ with the oxide films of dry and wet oxygen (95 ℃ H_2O) 2.5 × 10 ~ (20) cm ~ (-3)) or phosphorus (4 × 10 ~ (15) ~ 1.5 × 10 ~ (20) cm -3) and the deposition of these two elements on the silicon surface product. When the boron concentration is more than 1 × 10 ~ (20) / cm ~ 3, the oxidation rate increases at all temperatures, and the effect is most pronounced when dry oxygen is oxidized. The oxidation rate of P-doped silicon did not increase so rapidly at 1000 ℃, while at 920, the concentration of P was 1 × 10 ~ (19) cm -3 or higher, resulting in a marked increase of oxidation rate. Phosphorus doping The effect is most pronounced in wet oxygen. This result can be explained by the redistribution of impurities during thermal oxidation of silicon. These considerations can also be obtained by other impurities heavily doped test values affect the oxidation rate. At high temperatures, silicon reacts in various oxidizing atmospheres to form SiO 2. The kinetics of thermal oxidation of monocrystalline silicon is the subject of several recent papers (1-5). The authors of these papers reported that the oxidation rate does not depend on the bulk dopant concentration at the concentration range studied. The acceptor impurity and the main impurity concentration of the flower from a very low value (the silicon) to about 1 × 10 ~ (20) cm ~ (-3) as high, but also note that the concentration of oxidative impurities greater than 10 ~ ( 20) cm ~ (-3) silicon surface, the oxidation rate often deviate from the standard value of 6 or 7. Most deviations were found for samples of the device’s diffusion process. Recently, the role of wow oxidation in the development of surface-control devices and integrated circuits has become increasingly important, while the thickness of the oxide layer has become more interesting to control (8, 9). Therefore, the study decided to doping?