Comparative studies on Zn_(0.95)Co_(0.05)O thin films on C- and R-sapphire substrates

• 作 者: 彭英姿 Thomas Liew Chong Tow Chong
• 机 构: Data Storage Institute,DSI Building,5 Engineering Drive 1,Singapore 117608,Electrical and Computer E
• 出 处: Chinese Physics B
• 发表日期: 2004年期
• 关键词: sapphire Co hexagonal coercivity anisotropy perpendicular precipitate ferromagne

Zn0.95Co0.05 O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method.The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane (0001) or R-plane (11 ˉ 20) sapphire substrate.Based on the results of high-resolution transmission electron microscopy and x-ray diffraction,C-plane films show larger lattice mismatch.The films exhibit magnetic and semiconductor properties at room temperature.The coercivity of the film is about 8000 A/m at room temperature.They are soft magnetic materials with small remanent squareness S for both crystal orientations.There is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis) for the wurtzite structure.

Zn0.95Co0.05O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method. The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane ( 0001) or R-plane (11 ˉ 20) sapphire substrate. Based on the results of high-resolution transmission electron microscopy and x-ray diffraction, C-plane films show larger lattice mismatch. Films of magnetic and semiconductor properties at room temperature The coercivity of the film is about 8000 A / m at room temperature. They are soft magnetic materials with small remanent squareness S for both crystal orientations. Here is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis ) for the wurtzite structure.