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本文用电子计算机模拟了硅单晶中位错的电镜衍衬像。计算模拟像与集成电路硅材料中出现的位错的电子显微镜实验像符合较好。用计算像的方法准确地确定了位错的特性。文中还对改变试样厚度、衍射偏离参量以及吸收系数等不同条件下的位错像作了计算模拟。
In this paper, electron-computer simulation of the dislocation of silicon single crystal diffraction electron microscopy image. Computation of simulated images is in good agreement with electron microscopy experiments of dislocations in integrated circuit silicon materials. The method of computational imagery accurately determines the characteristics of dislocations. The dislocation images under different conditions such as changing the thickness of specimen, diffraction deviation parameter and absorption coefficient were also calculated and simulated.