φ75mm直拉硅单晶的控氧工艺

• 作 者: 曾世铭 王大平 张鲁
• 机 构: 北京有色金属研究总院,北京有色金属研究总院,北京有色金属研究总院
• 出 处: 稀有金属
• 发表日期: 2004年期
• 关键词: 器件工艺 硅单晶 mm 半导体材料 器件要求 氧含量 强制对流 钉扎 热对流 单晶炉

一、前言 一般地说,氧是半导体材料硅中含量最多的杂质,其含量可达10~(18)cm~(-3)数量级。硅中的氧兼有优缺点。优点为“吸除效应”和“钉扎效应”;缺点是单晶的电阻率和寿命会受影响,易出现诱生缺陷,晶片可能变形。优点对器件工艺有利,缺点对器件工艺有害,使晶片质量变坏。 众所周知,不同器件要求不同的氧含量:p型(100),[O]=1.0～1.3×10~(18)cm~(-3),用于MOS;n型(100),[O]=1.3

First, the preface Generally speaking, oxygen is the most abundant semiconductor impurities in silicon, its content up to 10 ~ (18) cm ~ (-3) orders of magnitude. Oxygen in silicon has both advantages and disadvantages. Advantages for the “suction effect” and “pinning effect”; drawback is the single crystal resistivity and life expectancy will be affected, prone to induced defects, the chip may be deformed. Advantage of the device technology is beneficial, the disadvantage of the device process is harmful to the deterioration of the quality of the wafer. It is well known that different devices require different oxygen contents: p type (100), [O] = 1.0-1.3 × 10-18 cm -3 for MOS; n type (100), [O] = 1.3