【摘 要】
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Recently,silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) have been demonstrated with transit frequencies above 350GHz at 300 K and above 500
【机 构】
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School of Electronic and Control Engineering, Road Traffic Detection and Equipment Engineering Resea
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Recently,silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) have been demonstrated with transit frequencies above 350GHz at 300 K and above 500 GHz at 4.5 K,[1] and the technology of SiGe BiCMOS has tued into a cost-efficient solution for high-frequency and high-volume applications.Future wireless communication electronics,such as radars and millimeter-wave imaging,demand even higher speed in combination with low-power consumption.For silicon-on-insulator (SOI),as a reduction in device parasitic,a built-in higher operating voltage capability,a reduction in signal crosstalk,improved soft error immunity,and an elimination of latchup,[2] the SOI CMOS technology has matured over the past 15 years to become mainstream.
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