Radio Frequency Low Noise Amplifier with Linearizing Bias Circuit

• 作 者: Wen-Tao Han Qi Yu Song Ye Mo-H
• 机 构: StateKeyLaboratoryofElectronicThinFilmsandIntegratedDevices,BroadGalaxyElectronicsTechnologyLtd.
• 出 处: 中国电子科技：英文版
• 发表日期: 2009年2期
• 关键词: 低噪声放大器 偏置电路 线性化 射频 SIGE 噪声系数 功率增益 仿真结果 Index Terms-Impedance matching linear ci
• 基金项目: Manuscript received August 13, 2008, revised October 20, 2008.

A 1.34 GHz±60 MHz low noise amplifier(LNA) designed in a 0.35 μm SiGe process is presented.The designed LNA exhibits a power gain of 21.46 dB and a noise figure(NF) of 1.27 dB at 1.34 GHz.The linearity is improved with an active biasing technique.The