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对加固Ｐ＋ｎｎ＋高压整流二极营进行了脉冲中子辐照和热中子辐照。ＤＬＴＳ测量表明，脉冲中子辐照（Φｎ＝８．６×１０１３ｎ／ｃｍ２）在硅中引入的缺陷主要是双空位Ｅ４和Ｅ３缺陷，氧空位和双空位缺陷强度很低。氧空位密度的降低可归因于辐照缺陷的衰减和再构。脉冲中子辐照引起Ｆｒｅｎｋｅｌ对成份的增加，增加的空位密度致使复杂络合物，例如（Ｏ十Ｖ２）或（Ｏ十Ｖ３）缺陷的有效产生。实验结果还表明，该类器件具有良好的耐辐照特性。文中还对退火特性进行了讨论。退火使氧空位和双空位Ｅ２增加，这可能是Ｖ２Ｏ、Ｖ３Ｏ分解所致。
Pulsed neutron irradiation and thermal neutron irradiation were conducted on the reinforced P + nn + high voltage rectifier diode battalion. DLTS measurements show that the defects introduced by pulsed neutron irradiation (Φn = 8.6 × 1013n / cm2) are mainly double vacancy E4 and E3 defects, and the oxygen vacancies and double vacancy defects are very low. The decrease in oxygen vacancy density can be attributed to the attenuation and reconstruction of the irradiation defects. Pulsed neutron irradiation causes an increase in Frenkel’s composition, with increased vacancy density resulting in efficient production of complex complexes such as (O-10) or (O-10) defects. The experimental results also show that these devices have good resistance to radiation. The annealing characteristics are also discussed. Annealing increased oxygen vacancies and double vacancies E2, which may be caused by decomposition of V2O and V3O.