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提出了一种利用特征提取来对硅中微／纳米级体缺陷的激光散射图样进行分析，以获得缺陷大小信息的分析方法。给出了该方法中第一特征值和第二特征值的定义，指出通过所提出的第一特征值及第二特征值即可迅速地判断出缺陷的大小量级所在。这种分析方法具有分析速度快，在体缺陷小于１μｍ时分辨率高，且可使系统实现自动化等优点。
A method of analyzing the laser light scattering pattern of micro / nano-scale defects in silicon by using feature extraction is proposed to obtain the information of defect size. The definition of the first eigenvalue and the second eigenvalue in this method is given. It is pointed out that the magnitude of the defect can be quickly determined by the proposed first eigenvalue and the second eigenvalue. This analysis method has the advantages of fast analysis, high resolution when the body defect is less than 1 μm, and the system can be automated.