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用蒙特卡罗方法模拟Ｓｉ＋注入Ｓｉ３Ｎ４／ＧａＡｓ的力学运动，以考察沉积在ＧａＡｓ材料表面的无定形Ｓｉ３Ｎ４阻挡层对Ｓｉ＋射程分布的影响．模拟计算和实验结果都表明，Ｓｉ３Ｎ４阻挡层能够有效地削减Ｓｉ＋在ＧａＡｓ衬底中的射程，避免沟道效应，得到浅结。但是阻挡层中也有相当数量的Ｓｉ、Ｎ原子由于与入射的Ｓｉ＋相互碰撞反冲进入ＧａＡｓ衬底。
The mechanical motion of Si3N4 / GaAs implanted by Si + was simulated by Monte Carlo method to investigate the influence of amorphous Si3N4 barrier layer on the Si + range distribution of GaAs material. Both simulation and experimental results show that the Si3N4 barrier layer can effectively reduce the Si + in the GaAs substrate in the range, to avoid the channel effect, get shallow junction. However, there is also a considerable amount of Si in the barrier layer, and the N atoms recoil into the GaAs substrate due to collision with the incident Si +.