论文部分内容阅读
本文分析了高能 Ti 离子注入 LiNbO_3后 x,y,z 三种不同切向的表面损伤分布及退火效应。x,y 切片表面损伤程度近乎无定形,Nb 原子迁移率 N_D/N=1;z 切片表面损伤仍未饱和,N_D/N=0.8。辐射损伤主要是大量 Nb 偏离晶格位置成为间隙原子,注入的 Ti 离子处于间隙位置—LiNbO_3结构中固有的空位,使晶格有微小的膨胀。注入后产生有大量的氧缺位,氧气氛中热退火可消除氧缺位,使位移原子恢复至原晶格位置,且大部分间隙位置上的 Ti 离子通过替代 Nb 或少数 Li 进入正规格点上,此处晶格有少许收缩;热处理后损伤的消除由注入层与衬底的界面处向外表面方向进行,需1000℃高温退火,晶格损伤才能获得明显的改善,氧气氛可防止氧缺位的增多。
This paper analyzes the distribution of surface damage and the annealing effect of x, y and z in different tangential directions after high-energy Ti ion implantation into LiNbO_3. The damage degree of x, y slice surface is almost amorphous, Nb atom mobility N_D / N = 1; z slice surface damage is still not saturated, N_D / N = 0.8. In the radiation damage, a large amount of Nb is deviated from the lattice site to become interstitial atoms, and the Ti ions are implanted into the vacancies inherent in the interstitial position -LiNbO_3 structure, causing slight lattice expansion. A large number of oxygen vacancies are generated after the implantation. Thermal annealing in oxygen atmosphere can eliminate the oxygen vacancies, restoring the displaced atoms to the original lattice positions, and Ti ions at most of the interstitial positions enter the regular lattice by replacing Nb or a few Li , Where the lattice a little contraction; heat treatment after the elimination of damage from the injection layer and the substrate interface to the outer surface direction, to be annealed at 1000 ℃, lattice damage can be significantly improved, the oxygen atmosphere to prevent oxygen Vacancies increased.