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Aluminum-doped zinc oxide/platinum/fluorine-doped tin oxide(AZO/Pt/FTO) trilayer films were prepared by sputtering 5-nm-thick Pt layers and 150-nm-thick AZO layers in sequence on commercial FTO glass.The effects of onestep annealing and layer-by-layer annealing on the morphology,structure and photoelectric properties of the AZO/Pt/FTO trilayer films were comparatively analyzed.It is found that the both annealing approaches increased the grain size and improved the crystallinity of the films,leading to enhancement in transmittance and conductivity.However,layer-by-layer annealing led to the formation of quasi-continuous or continuous AZO layers,different from the sparsely distributed AZO particles brought about by one-step annealing,resulting in excellent optical and electrical properties.Specifically,after layer-by-layer annealing at 400 ℃ for both Pt and AZO layers,the AZO/Pt/FTO trilayer film showed an increase in average transmittance from 71.3% to 85.3% and a decrease in sheet resistance from 7.5 to 5.6 Ω/□,leading to the highest figure of merit of 3.64 × 10~(-2) Ω~(-1).
Aluminum-doped zinc oxide / platinum / fluorine-doped tin oxide (AZO / Pt / FTO) trilayer films were prepared by sputtering 5-nm-thick Pt layers and 150-nm-thick AZO layers in sequence on commercial FTO glass. of onestep annealing and layer-by-layer annealing on the morphology, structure and electrical properties of the AZO / Pt / FTO trilayer films were comparatively analyzed. It is found that the both annealing methods increase the grain size and improved the crystallinity of the films , leading to enhancement in transmittance and conductivity. Layer-by-layer annealing led to the formation of quasi-continuous or continuous AZO layers, different from the sparsely distributed AZO particles brought about by one-step annealing, resulting in excellent optical and electrical properties. Specifically, after layer-by-layer annealing at 400 ° C for both Pt and AZO layers, the AZO / Pt / FTO trilayer film showed an increase in average transmittance from 71.3% to 85.3% and a decrease in sheet re sistance from 7.5 to 5.6 Ω / □, leading to the highest figure of merit of 3.64 × 10 -2 Ω -1.