利用光学衬度测定部分覆盖二维晶体材料的SiO_2/Si衬底的SiO_2薄膜厚度（英文）

• 作 者: 鲁妍 李晓莉 张昕 吴江滨 谭平恒
• 机 构: State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors, Chinese Acade
• 出 处: Science Bulletin
• 发表日期: 2015年08期
• 关键词: 二维晶体 SiO_2 SiO_2/Si 衬底 衬度 薄膜厚度 石墨烯 微米 光学 多层介质

二维晶体材料的可见度显著地依赖于Si O2/Si衬底的Si O2层厚度,因此Si O2层厚度的测定对研究二维晶体材料至关重要.本文提出一种基于光学衬度的显微测量技术.由于该技术具有微米级别的空间分辨率,因此,即使衬底已经被二维晶体材料部分覆盖,该技术仍然可以用来测定衬底Si O2层的厚度.作为应用实例,本文成功地鉴别了Si O2层厚未知的Si O2/Si衬底上少层石墨烯的层数.这项技术可以推广到测定其他多层介质结构衬底的厚度和在这些衬底上的二维晶体材料的层数.

The visibility of two-dimensional crystalline materials depends significantly on the Si O2 layer thickness of the Si O2 / Si substrate, so the determination of Si O2 layer thickness is very important for the study of two-dimensional crystalline materials.This paper presents an optical contrast-based microscopy Measurement technique, the technology can still be used to determine the thickness of the substrate Si O2 layer, even though the substrate has been partly covered by the two-dimensional crystalline material due to the micron-level spatial resolution of the technique. As an example of application, The number of layers of graphene on a Si02 / Si substrate with unknown Si02 layer thickness was identified.This technique can be generalized to the determination of the thickness of other multilayer dielectric substrates and the two-dimensional crystalline material on these substrates The number of layers.