论文部分内容阅读
采用液封直拉法(LEC)生长了4 inch直径(100)GaSb单晶并进行了衬底晶片的加工制备。通过优化热场,可重复生长出非掺和掺Te整锭(100)单晶,单晶锭的重量为5~8 kg,成晶率可达80%以上。4 inch(100)晶片大部分区域的位错腐蚀坑密度小500 cm~(-2) ,其(004)双晶衍射峰的半峰宽为29弧秒,表明晶片衬底的完整性相当好。晶体生长过程中固液界面较为平坦,因而晶片表现出良好的横向电学均匀性。经研磨和机械化学抛光,制备出具备良好平整度和表面粗糙度的开盒即用衬底晶片。通过控制本征受主缺陷浓度和掺杂浓度,制备出具有良好近红外透光率的n型GaSb单晶衬底。
A 4 inch diameter (100) GaSb single crystal was grown by Liquid Czochralski method (LEC) and the substrate wafers were prepared. By optimizing the thermal field, non-doped single-crystal ingot (100) single crystal can be repeatedly grown. The weight of the single crystal ingot is 5-8 kg, and the crystallization rate can reach more than 80%. The density of dislocation corrosion pits in most of the 4 inch (100) wafers was less than 500 cm -2 and the full width at half maximum (004) of the (004) birefringence peak was 29 arcsec, indicating that the integrity of the wafer substrate was quite good . Solid-liquid interface during the crystal growth is relatively flat, so the wafer shows good lateral electrical uniformity. After grinding and mechanical polishing, prepared with good flatness and surface roughness of the ready-to-use substrate wafer. By controlling the intrinsic acceptor defect concentration and doping concentration, an n-type GaSb single crystal substrate with good near infrared transmittance was prepared.