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利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0·270eV处有一个深能级;GaN注入Er经900℃,30min退火后的样品出现了四个深能级,能级位置位于导带下0·300eV,0·188eV,0·600eV和0·410eV;GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级,能级位置位于导带下0·280eV,0·190eV,0·610eV和0·390eV;对每一个深能级的来源进行了讨论.光谱研究表明,掺Er的GaN样品经900℃,30min退火后,可以观察到Er的1538nm处的发光,而且对能量输运和发光过程进行了讨论.
The electrical and optical properties of GaN and Er / Pr-doped GaN samples were analyzed by deep level transient spectroscopy (DLTS) and Fourier transform infrared spectroscopy (FT-IR) There is a deep level at 0 · 270eV under the conduction band. Four deep levels emerge from the samples annealed at 900 ℃ for 30min, and the energy levels are located at 0 · 300eV and 0 · 188eV under the conduction band 600eV and 0 · 410eV. The samples annealed at 1050 ℃ and 30min also showed four deep levels, the energy levels were located at 0 · 280eV, 0 · 190eV, 0 · 610eV and 0 · 390eV under the conduction band. The sources of each deep level are discussed.The spectroscopic studies show that the emission of Er at 1538 nm can be observed after the Er-doped GaN samples are annealed at 900 ℃ for 30 min, and the energy transport and luminescence processes are discussed .