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本文就Ar~+激光辐照功率、衬底温度等因素对SOI结构再结晶多晶硅/二氧化硅界面性质的影响进行研究,利用高频和准静态C-V技术测量该界面氧化物固定电荷密度N_t和界面态陷阱密度N_(it),用平面和剖面TEM分析再结晶多晶硅膜的结构特性,我们发现当衬底温度为 320℃和420℃时存在一个功率窗口 6.0～6.2W.
In this paper, the influence of Ar ~ + laser irradiation power, substrate temperature and other factors on the interfacial properties of recrystallized polysilicon / SiO2 with SOI structure was investigated. The fixed charge density N_t and Interface state trap density N_ (it). The planar and cross-sectional TEM analysis of the recrystallized polysilicon films shows that there is a power window of 6.0 ~ 6.2W when the substrate temperature is 320 ℃ and 420 ℃.