High resolution X-ray diffraction investigation of epitaxially grown SrTiO_3 thin films by laser-MBE

• 作 者: 翟章印 吴小山 贾全杰
• 机 构: Lab of Solid State Microstructures and Department of Physics, Nanjing University,Jiangsu Key Laborat
• 出 处: 中国物理C
• 发表日期: 2004年期
• 关键词: grazing reciprocal relaxation dislocation ferroelectric incident screw tensile r

SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE.X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness.From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed.

SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with / without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X- ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness. From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed.