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本文研究了有源层受主浓度(P_a)对InGaAsP/InP双异质发光管特性的影响。有源层受主浓度P_a≈2×10~(17)～1×10~(18)cm~(-3)的器件,具有较大的光输出功率P(?)1mW;截止频率f(?)为30～80MHz,并且有正常的Ⅰ-Ⅴ特性。有源层浓度高于上述浓度的器件,光输出功率降低,并且具有异常的Ⅰ-Ⅴ特性。在器件光谱半宽△λ=(λ~2/1.24)nkT关系式中,n值是有源层受主浓度(P_a)的函数。上述结果表明:有源层受主浓度(P_a)是影响器件特性的重要因素之一。
In this paper, the influence of active layer acceptor concentration (P_a) on the characteristics of InGaAsP / InP double heteropole tubes was studied. The device with active layer acceptor concentration P_a≈2 × 10 ~ (17) ~ 1 × 10 ~ (18) cm ~ (-3) has a large optical output power P (λ) of 1mW and the cutoff frequency f ) Is 30 to 80 MHz and has normal I-V characteristics. Devices having higher concentrations of the active layer than those described above have reduced optical output power and have abnormal I-V characteristics. In the device spectral half-width Δλ = (λ ~ 2 / 1.24) nkT, the value of n is a function of the active layer acceptor concentration (P_a). The above results show that: the active layer acceptor concentration (P_a) is one of the important factors that affect the device characteristics.