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用AsCl_3-Ga-H_2体系生长GaAs气相多层外延材料。研究了一些生长参数对缓冲层中Ec-0.82eV深中心密度n_T的影响,讨论有源层和缓冲层之间的界面特性以及有关在微波器件中的应用。
Growth of GaAs Vapor Multilayer Epitaxial Materials Using AsCl_3-Ga-H_2 System. The effect of some growth parameters on Ec-0.82eV deep center density n_T in the buffer layer was investigated, and the interface characteristics between the active layer and the buffer layer were discussed as well as their applications in microwave devices.