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ZnO薄膜可以具有压电性和透光导电性两种不同性质，取决制备中的不同沉积条件。本文介绍采用微波电子回旋共振（ECR）等离子体反应溅射制备ZnO薄膜的实验装置和方法。在氢气流量是4cm3／s，氧气流量是15cm3／s，基片温度250℃时沉积出高度C轴择优取向的ZnO膜，其取向分散度为2．5°，偏离度为0．5°。在氢气流量是6cm3／s，氧气流量是0．5cm3／s，基片温度150°时沉积的ZnO膜其可见光透率85％，电阻车3．27×10－3Ω·cm。
ZnO thin films can have two different properties, piezoelectric and light-transmitting, depending on the deposition conditions in the fabrication. This paper presents an experimental setup and method for preparing ZnO films by microwave electron cyclotron resonance (ECR) plasma reactive sputtering. When the flow rate of hydrogen gas is 4cm3 / s and the flow rate of oxygen gas is 15cm3 / s, a ZnO film with a preferred orientation along the C axis is deposited at a substrate temperature of 250 ℃. The orientation dispersion degree is 2.5 ° and the deviation degree is 0.5 °. The visible light transmittance was 85% and the resistance car was 3.27 × 10 -3 Ω · cm at a hydrogen flow rate of 6 cm 3 / s, an oxygen flow rate of 0.5 cm 3 / s and a substrate temperature of 150 ° C.