Difference in electron- and gamma-irradiation effects on output characteristic of color CMOS digital

• 作 者: MENGXiangti KANGAiguo ZHANGXim
• 机 构: InstituteofNuclearEnergyTechnology,InstituteofLowEnergyNuclearPhysics
• 出 处: 稀有金属：英文版
• 发表日期: 2004年2期
• 关键词: 辐射损伤 电子辐射 Γ辐射 互补金属氧化物半导体 彩色摄象传感器 输出特性 semiconductor technology irradiation damag
• 基金项目: 国家自然科学基金，清华大学校科研和教改项目

Changes of the average brightness and non-uniformity of dark output images, and quality of pictures captured under natural lighting for the color CMOS digital image sensors irradiated at different electron doses have been studied in comparison to those fr