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实用的高性能栅控真空发射阴极的出现将强烈地影响射频信号源技术。以场发射阵列(FEA)为代表的栅控发射阴极,兼有真空电子输运和固态微细加工两者的优点,它将会开发出新型的密度调制射频源。这些器件可以给系统的设计者在提高功率系数,效率、热控能力和降低成本方面提供许多有利的条件。尽管目前的进展侧重于以发展场发射阴极阵列为基础的射频源,但一种新的射频源成为实用技术之前会有一系列的技术难题需要克服。本文将考虑这些问题,以及在现有技术条件下的可行性,同时针对这些技术问题,对这种新型器件可能覆盖的范围进行了说明。
The emergence of practical high-performance gated vacuum emitters will strongly affect RF signal source technology. Gated emission cathodes, typified by field-emission arrays (FEAs), combine the advantages of both vacuum electron transport and solid-state micromachining, with the development of new density modulated RF sources. These devices provide system designers with many advantages in terms of power factor, efficiency, thermal control and cost reduction. Although current progress has focused on RF sources based on the cathode array of the field emission, there are a number of technical challenges to overcome before a new RF source becomes a viable technology. This article considers these issues as well as their feasibility under existing technology conditions, and explains the possible coverage of this new device for these technical issues.