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本文提出采用平面电阻炉单面加热,以N_2携带SiH_4和NH_3作为反应气体,用CVD法淀积氮化硅薄膜的工艺。分析了Si_3N_4淀积过程中存在的气相反应。讨论了气体流动形式、流量和反应管横截面形状对淀积膜均匀性的影响。平面电炉的加热方式允许采用横截面极扁的石英反应管,为淀积均匀的Si_3N_4膜提供了较佳的设备条件,理论分析和实际结果都证实了这一优点。平面电阻炉的加热方式还具有设备简单,温度的测量准确、控制可靠,无高频污染等优点。这种设备原则上可推广用于其它的CVD工艺。
In this paper, a technique of single-side heating of planar resistance furnace to carry SiH 4 and NH 3 as reactant gases by N 2 is proposed to deposit silicon nitride film by CVD. The gas phase reaction during the deposition of Si_3N_4 was analyzed. The effects of gas flow pattern, flow rate and cross-sectional shape of the reaction tube on the uniformity of deposited films were discussed. The flat electric furnace heating method allows the use of very flat cross-section of the quartz tube, for the deposition of uniform Si_3N_4 film provides better equipment conditions, theoretical analysis and practical results have confirmed this advantage. Plane resistance furnace heating method also has the advantages of simple equipment, accurate temperature measurement, reliable control, no high-frequency pollution. In principle, such a device can be used for other CVD processes.