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用固态再结晶法生长了掺Sb-Hg_(0.8)Cd_(0.2)Te晶体。通过对掺杂晶片不同条件的热处理,促使晶体内的缺陷状态发生变化,并用热处理后迅速淬火的方法冻结高温下的缺陷状态。电学测量结果表明:掺杂样品的空穴浓度和热处理条件的关系明显不同于未掺杂样品。根据缺陷化学平衡理论分析认为重掺杂样品中Sb大多数以中性复合缺陷的形式存在,Sb具有受主、施主二重性,其状态和高温热处理条件有关。
Sb-Hg_ (0.8) Cd_ (0.2) Te crystals were grown by solid state recrystallization. Through the different conditions of the doping of the wafer heat treatment, prompting changes in the crystal defects, and rapid quenching after the heat treatment to freeze the defect state at high temperatures. The electrical measurement results show that the relationship between the hole concentration and the heat treatment conditions of the doped sample is obviously different from that of the undoped sample. Based on the chemical equilibrium theory of defects, it is considered that most of the Sb in the heavily doped samples exist in the form of neutral recombination defects. Sb has the duality of acceptor and donor, and its state is related to the condition of high temperature heat treatment.