无定形硅氢靶摄象管

• 作 者: 杜家方 尤悦 杨扬
• 机 构: 南京大学,南京大学,华东电子管厂,
• 出 处: 真空电子技术
• 发表日期: 1988年06期
• 关键词: 摄象管 薄膜晶体管 无定形硅 光吸收系数 辉光放电 太阳电池 暗电流 氢化非晶硅 可见光 光照

氢化非晶硅(a—Si∶H)因基隙态密度低,能实现可控掺杂,在可见光区具有高的光吸收系数。因此,在低成本太阳电池、薄膜晶体管及成象器件中有着良好的应用前景。本文报导采用辉光放电法(GD法)沉积a—Si∶H层作为光导层,用a—SiNx∶H及Sb_2S_3层作为阻挡层结构的摄象管。灵敏度达到0.5lx白光光照下O.15μA,分辨率为600TVL,暗电流为10nA,惰性还有待进一步改善。

Hydrogenated amorphous silicon (a-Si: H) can achieve controlled doping due to low interstitial density, and has a high light absorption coefficient in the visible region. Therefore, it has good application prospect in low cost solar cells, thin film transistors and imaging devices. In this paper, we report the imaging tube with a-Si: H layer as the photoconductive layer and the a-SiNx: H and Sb_2S_3 layers as the barrier layer by the glow discharge method (GD method). Sensitivity 0.5lx white light under O.15μA resolution of 600TVL, dark current of 10nA, inertia yet to be further improved.