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基于ａ石英的晶体结构，将红外发散响应模型和双势阱模型应用到含Ａｌ杂质的ａ石英中Ａｌ￣（３＋）－空穴的取向变化弛豫过程，研究其低温介电损耗特性，结果表明Ｔ＜６．５Ｋ时，介电损耗的主要贡献来自于单声子助隧道弛豫过程；Ｔ＞１０Ｋ时，主要贡献来自于热跃迁弛豫过程；而在中间温区，介电损耗是两种过程的迭加，同一弛豫体不同的弛豫过程对应于不同的红外发散响应，还讨论了同一弛豫体引起的超声弛豫损耗。
Based on the crystal structure of a quartz, the infrared divergence response model and the double-well model were applied to Al ~ (3 +) - hole orientation relaxation process in Al-doped a-quartz, and the low-temperature dielectric loss characteristics were studied. It is shown that the main contribution of dielectric loss at T <6.5K comes from the relaxation process of mono phonon tunneling. At T> 10K, the main contribution comes from the thermal transition relaxation process. In the intermediate temperature region, the dielectric loss is The superposition of two kinds of processes, the different relaxation processes of the same relaxation body correspond to different infrared divergence responses, and also discuss the ultrasonic relaxation loss caused by the same relaxation body.