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MOS大規模集成(LSI)电路的許多可靠性問題都和分离半导体电路、中规模集成电路的可靠性问题有关。但是,由于MOSLSI电路的基片大、密度高,增加了复杂性,因而需要不同的評估方法。为了制定生产控制、实驗方法和可靠性評估程序,以及使MOSLSI电路的性能和可靠性最佳化,需要設計者、厂家和用戶(可靠性三方)之間紧密地合作,通过上述途径,經外部連接具有更多功能的MOSLSI电路組成的系統,此用分离元件或小规模集成电路組成的同样复杂系統可靠性更高。本文还討論可靠性的某些特殊方面,如图形灵敏度、生产控制、組装、封装和电性能实驗。
Many of the reliability issues associated with MOS LSIs are related to the reliability issues associated with the separation of semiconductor and medium-scale integrated circuits. However, due to the large substrate MOSLSI circuit, high density, increasing complexity, thus requiring different assessment methods. In order to develop production control, experimental methods and reliability evaluation procedures and to optimize the performance and reliability of MOSLSI circuits, it is necessary for designers, manufacturers and users (reliability tripartite) to work closely together, A system consisting of MOSLSI circuits with more functionality connected, the same complex system of discrete components or small scale integrated circuits is more reliable. This article also discusses some specific aspects of reliability such as graph sensitivity, manufacturing control, assembly, packaging, and electrical performance experiments.