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对硫掺杂Ｃ６０薄膜样品在４３３Ｋ进行真空退火，并测量了其电导率随温度的变化关系．发现硫掺杂后Ｃ６０薄膜的电导激活能减小，电导率显著增大．电导率随温度的变化曲线在３６８Ｋ到３８８Ｋ的范围内，存在一个电导率与温度的关系不严格遵循指数规律的过渡区，在过渡区的两侧硫掺杂的Ｃ６０薄膜则表现出明显的半导体特性，这是由于在不同温度范围内样品中硫分子的结构相变所引起的
The sulfur-doped C60 thin film samples were vacuum annealed at 433K and their conductivity dependence on temperature was measured. It is found that the conductivity activation energy of C60 thin film decreases after sulfur doping, and the conductivity increases significantly. Conductivity with temperature curve in the range of 368K to 388K, there is a relationship between the conductivity and temperature does not strictly follow the exponential law of the transition region, the sulfur-doped C60 films on both sides of the transition region showed obvious semiconductor Properties due to the structural phase transition of the sulfur molecules in the sample at different temperature ranges