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采用离子束增强沉积方法，在p型（100）单晶硅衬底上，通过不同能量的氙离子辅助轰击，以不同的沉积速率制备了Ti－B超硬薄膜。X射线衍射分析结果表明，Ti-B薄膜呈TiBx多晶结构，其晶化程度随蒸发速率的不同而变化，而其缺位值x随氙离子轰击能量的不同而变化。超显微硬度的测试结果表明，氙离子束能量为60keV，沉积速率为0．6nm／s时，可以获得性能最佳的Ti-B超硬薄膜，其本征硬度在测试负荷为5mN时达28．6GPa，超过了TiB体材料的硬度水平，是衬底硅片的3．2倍。利用SEM观察了Ti-B薄膜的横断面，并讨论了工艺参数对Ti－B超硬薄膜韧性的影响。
Ti-B superhard films were prepared on p-type (100) monocrystalline silicon substrates by xenon ion bombardment with different energies at different deposition rates by ion beam enhanced deposition. The results of X-ray diffraction analysis show that Ti-B thin films have TiBx polycrystalline structure, and the degree of crystallization changes with the evaporation rate, while the vacancy value x changes with the xenon ion bombardment energy. The test results of the ultra-microhardness show that the Ti-B superhard film with the best performance can be obtained when the xenon beam energy is 60keV and the deposition rate is 0.6nm / s. The intrinsic hardness of the Ti-B ultrahard film reaches 5mN 28.6GPa, exceeding the hardness of the TiB material, which is 3.2 times that of the substrate silicon. The cross section of Ti-B film was observed by SEM, and the influence of process parameters on the toughness of Ti-B superhard film was discussed.