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采用Sb自助熔剂法成功生长高质量的USb_2单晶,并研究了磁化率、电阻、磁阻和比热容等性质。研究表明,中等关联强度的USb_2中的5f电子具有巡游和局域双重特征。USb_2中的5f电子在260 K附近开始发生相干,203 K由顺磁态转变为反铁磁态,进行费米面的重构。在113 K以下局域的5f电子与传导电子发生第一次杂化使费米面附近电子结构发生变化。在54 K以下通过第二次杂化使得费米面附近形成了杂化能隙。在更低温度下晶体场效应对物理性质也产生了一定的影响。
The high quality USb_2 single crystal was successfully grown by Sb flux method and the properties of magnetic susceptibility, resistance, reluctance and specific heat capacity were studied. The results show that the 5f electrons in USb_2 with medium intensity of correlation have the dual characteristics of parade and local area. The 5f electrons in USb_2 begin to cohere near 260 K, and the transition from 203 K to the antiferromagnetic state by the paramagnetic state is performed to reconstruct the Fermi surface. The first hybridization occurs between the 5f electron and the conduction electron in the region below 113 K, which changes the electronic structure near the Fermi surface. Below 54 K, hybridization gap was formed near the Fermi surface through the second hybridization. At lower temperatures, the crystal field effect has a certain impact on the physical properties.