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工作报告 钮 页用C-V测量技术研究HCI氧化对表面态的影响…………………………………H(1)全离子注入C。D研制报告………………………………·,…………………·,…··三(1)n-MOS存储器的场掺杂…………………………………………………………一(16)电子元器件微型漏泄的堵塞与
Work report button C-V measurement technique to study the influence of HCI oxidation on the surface state ....................................... H (1) All ion implantation C. D Development Report ................................, ..................... ·, ... ··· Three (1) Field-Doping of n-MOS Memory ........................... ....................................... One (16) miniature leakage of electronic components and plugging