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高频磁膜变感元件已经构成并加以观测,在单一偏置条件下它可有两状态或三状态操作。作为两状态元件时,磁膜变感元件可用作多数决定元件,与铁氧体磁心变感元件极为相近。另一种有用的逻辑元件是“阈”元件,在这种元件中输入激励必须达到某一最小电平才能持续振荡。在加上适当的时钟作用后,磁膜电感可当作在系统中有单向信息流的门用。由偏置磁场所控制的门的作用可由另一变感元件所整流了的输出而产生。文中描述了双元件二进加法器、二进移位计数器及移位寄存器。三状态工作的可能性也就七个元件构成的三进位加法器加以探索。
High-frequency magnetic film sensing element has been formed and observed, in a single bias conditions it can have two or three state operation. As a two-state element, the magnetic film sensing element can be used as a majority decision element, very close to the ferrite core sensing element. Another useful logic element is the “threshold” element, in which the input stimulus must reach a certain minimum level to sustain the oscillation. With proper clocking, the magnetic film inductor can be used as a gate for one-way traffic in the system. The effect of the gate controlled by the bias magnetic field can be generated by the output rectified by the other transducing element. The article describes a two-element binary adder, a binary shift counter, and a shift register. The possibility of three-state work is also explored in terms of a seven-element triple adder.