Effect of N_2-Gas Partial Pressure on the Structure and Properties of Copper Nitride Films by DC Rea

• 作 者: 刘祖黎 李兴鳌 左安友 袁作彬 杨建平 姚凯伦
• 机 构: Department of Physics,Huazhong University of Science and Technology,Wuhan 430074,China,Department of
• 出 处: Plasma Science and Technology
• 发表日期: 2007年02期
• 关键词: sputtering magnetron nitride preferred resistivity conduction metallic sharply s

Copper nitride thin films were deposited on glass substrates by reactive direct cur-rent(DC)magnetron sputtering at various N_2-gas partial pressures and room temperature.X-ray diffraction measurements showed that the films were composed of Cu_3N crystallites and ex-hibited a preferential orientation of the[111]direction at a low nitrogen gas(N_2)partial pressure.The film growth preferred the[111]and the[100]direction at a high N_2 partial pressure.Suchpreferential film growth is interpreted as being due to the variation in the Copper(Cu)nitrificationrate with the N2 pressure.The N2 partial pressure affects not only the crystal structure of the filmbut also the deposition rate and the resistivity of the CuaN film.In our experiment,the depositionrate of Cu_3N films was 18 nm/min to 30 nm/min and increased with the N_2 partial pressure.Theresistivity of the Cu_3N films increased sharply with the increasing N_2 partial pressure.At a low N_2partial pressure,the Cu_3N films showed a metallic conduction mechanism through the Cu path,and at a high N_2 partial pressure,the conductivity of the Cu_3N films showed a semiconductorconduction mechanism.

Copper nitride thin films were deposited on glass substrates by reactive direct cur-rent (DC) magnetron sputtering at various N_2-gas partial pressures and room temperature. X-ray diffraction measurements showed that the films were composed of Cu_3N crystallites and ex-hibited a preferential orientation of the [111] direction at a low nitrogen gas (N_2) partial pressure. film growth preferred the [111] and the [100] direction at a high N_2 partial pressure. variation in the Copper (Cu) nitrificationrate with the N2 pressure. N2 partial pressure affects not only the crystal structure of the filmbut also the deposition rate and the resistivity of the CuaN film. Our experiment, the depositionrate of Cu_3N films was 18 nm / min to 30 nm / min and increased with the N 2 partial pressure. Theresistivity of the Cu_3N films increased sharply with increasing increasing N_2 partial pressure. At low N_2partial pressure, the Cu_3N films showed a metalli c conduction mechanism through the Cu path, and at a high N_2 partial pressure, the conductivity of the Cu_3N films showed a semiconductorconduction mechanism.