论文部分内容阅读
最近,热粘结应用于绝缘体上硅(SOI)工艺,引起了人们的广泛注意。热粘接(又称直接粘结)分两步进行:首先将经过抛光和彻底水解的硅和/或二氧化硅表面进行粘合;然后将其退火,以促成扩散粘结。为了制作高质量的SOI层,必须证明两硅片间的整个粘结表面无空隙存在(我们在实验中用的是 4英寸硅片)。我们发现,在用标准的硅片退火工艺进行退火之后,还必须在高温、高压下进行退火,以获得完全无空隙的界面。另外,我们还发现,为了确保热处理完成以后不留任何空隙,硅片的粘合操作,必需在可控气氛中进行。我们将提供揭示粘结界面原子结构的透射电子显微照片。我们还将给出显示粘结空隙表面本质的C型扫描声学显微照片和红外透射热成像。
Recently, thermal bonding has been applied to silicon on insulator (SOI) processes, attracting widespread attention. Thermal bonding, also known as direct bonding, takes place in two steps: the polished and thoroughly hydrolysed silicon and / or silica surfaces are first bonded; and then annealed to facilitate diffusion bonding. In order to make a high-quality SOI layer, it is necessary to prove that there is no void in the entire bonding surface between the two wafers (we used the 4-inch wafer in the experiment). We have found that after annealing with a standard silicon wafer annealing process, it is also necessary to anneal at high temperature and pressure to obtain a completely void-free interface. In addition, we also found that in order to ensure that no voids remain after the heat treatment is completed, the bonding operation of the silicon wafer must be performed in a controlled atmosphere. We will provide a transmission electron micrograph that reveals the atomic structure of the bonding interface. We will also give C-Scanning Acoustic Microphotographs and Infrared Transmission Thermal Imaging showing the nature of the bonding void surface.