论文部分内容阅读
日本松下电器产业材料所已研究成功新的a-SiP型层的形成方法,并将它应用于Pin型太阳电池。其输出效率约比单晶硅高出50％。该研究所为了提高Pin型太阳电池效率使用了透明电极,并一直致力于研究杂质元素以及探索掺B的O_2附加膜生成条件,以得到导电率(σ)高、光学禁带宽度(Eg)大
Japan's Matsushita Electric Industrial Materials Institute has studied the successful formation of a-SiP-type layer and applied it to Pin-type solar cells. Its output efficiency is about 50% higher than that of single crystal silicon. In order to improve the efficiency of Pin-type solar cells, the Institute has used transparent electrodes and has been devoted to investigating impurity elements and exploring conditions for forming additional oxygen-doped B 2 films to obtain high conductivity (σ) and large optical forbidden band width (Eg)