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本文报道用低压金属有机化合物汽相外延(LP-MOVPE) 的方法生长了晶格匹配的Ga_(1-x)In_4As/InP 量子阱结构材料.X光双晶衍射和透射电子显微镜测量表明多量子阱结构的周期性和界面质量较好、光致发光和光吸收谱的测量都观测到因量子尺寸效应导致的带间跃迁向高能方向的移动.
In this paper, a lattice-matched Ga 1-x In 4 As / InP quantum well structure material has been grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) The well structure has good periodicity and good interface quality. Both photoluminescence (PL) and optical absorption spectra (PLS) measurements show that the band-to-band transition shifts to high energy due to quantum size effect.