An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

• 作 者: 刘颖 何进 陈文新 杜彩霞 叶韵 赵巍 吴文 邓婉玲 王文平
• 机 构: School of Electronics and Computer Science,Peking University,Peking University Shenzhen SOC Key Labo
• 出 处: Chinese Physics B
• 发表日期: 2014年09期
• 关键词: tunneling partition TCAD Poisson drain validity considering analytic swing simpl

An analytical model of gate-all-around(GAA) silicon nanowire tunneling field effect transistors(NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling(BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane’s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developed based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane’s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.