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本文对硅中砷扩散系数考虑了中性空位引起的本征扩散项D~0的影响,推导而得出D~0对表面浓度N_s,结深x_j(t)等的影响大约为5-10％。在离子注入退火的解析模型中考虑其影响是有实际意义的。
In this paper, the diffusion coefficient of arsenic in silicon takes into account the influence of the intrinsic diffusion term D ~ 0 caused by the neutral vacancy, and deduces that the influence of D ~ 0 on the surface concentration N_s, junction depth x_j (t) and so on is about 5-10 %. It is of practical interest to consider its effect in analytical models of ion implantation annealing.