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The Raman spectra of poly(3-methylthiophene) (PMeT) films with different thicknesses, which have beenelectrochemically deposited on a flat stainless steel electrode surface by direct oxidation of 3-methylthiophene in borontrifluoride diethyl etherate (BFEE) at a constant applied potential of 1.38 V (versus SCE), have been investigated byexcitation with a 633-nm laser beam. The spectroscopic results demonstrated that the doping level of PMeT film wasincreasing during film growth. This finding was also confirmed by electrochemical examination. Moreover, the Raman bandsassigned to radical cations and dications in doped PMeT films were found approximately at 1420 and 1400 cm~(-1),respectively. Radical cations and dications coexist on the backbone of PMeT as conductive species and their concentrationsincrease with the increase of doping level. Successive cyclic voltammetry was proved to be an effective approach toimproving the doping level of as-grown thin compact PMeT film.
The Raman spectra of poly (3-methylthiophene) (PMeT) films with different thicknesses, which have beelectrochemically deposited on a flat stainless steel electrode surface by direct oxidation of 3-methylthiophene in borontrifluoride diethyl etherate (BFEE) at a constant applied potential of 1.38 V (versus SCE), have been investigated byexcitation with a 633-nm laser beam. The spectroscopic results of the doping level of PMeT film wasincreasing during film growth. This finding was also confirmed by electrochemical examination. Moreover, the Raman bandsassigned to radical cations and dications in doped PMeT films were found approximately at 1420 and 1400 cm -1, respectively. Radical cations and dications coexist on the backbone of PMeT as conductive species and their concentrations increase with the increase of doping level. Successive cyclic voltammetry was proved to be an effective approach toimproving the doping level of as-grown thin compact PMeT film.