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在室温和液氮温度下,0-60kbar范围内对In_xGa(1-x)As/GaAs应变单量子阱结构进行了静压光致发光研究.在室温下,量子阱中发光峰随压力的变化是亚线性的,而在液氮温度下是线性的.阱中发光峰的压力系数比GaAs势垒的小约10％左右.发现对应于导带第二子带的发光峰的压力系数略大于第一子带的.此结果与GaAs/Al_xGa_(1-x)As量子阱的情况正好相反.
Static pressure photoluminescence (PL) measurements of In_xGa (1-x) As / GaAs single-quantum well quantum well structures were carried out at room temperature and liquid nitrogen at 0-60kbar.With the change of pressure at room temperature, Is linearly linear and is linear at liquid nitrogen temperatures.The pressure coefficient of the luminescence peak in the well is about 10% less than that of the GaAs barrier and the pressure coefficient corresponding to the luminescence peak of the second subband of the conduction band is found to be slightly larger The first sub-band of the GaAs / Al_xGa_ (1-x) As quantum well the opposite.