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采用熔盐脉冲电沉积方法在纯铌表面制备出渗硅层。研究了占空比对渗硅层成分、沉积速率、组织和相结构的影响,并考察了渗硅层的高温抗氧化性。结果表明,渗硅层成分不受占空比影响。随占空比的增大,渗硅层晶粒由细小变得粗大,渗硅层组织致密、平整。占空比对渗硅层相结构无影响,均由单相Nb Si2组成,并在(110)和(200)晶面上具有择优取向。Nb Si2渗硅层使得纯铌的高温抗氧化性能得以提高。
A molten silicon pulse electrodeposition method was used to prepare a siliconized layer on the pure niobium surface. The effect of duty cycle on the composition, deposition rate, microstructure and phase structure of the infiltrated layer was investigated. The high temperature oxidation resistance of the infiltrated layer was also investigated. The results show that the composition of the silicon layer is not affected by the duty cycle. With the increase of duty cycle, the grain size of the siliconized layer becomes coarse by the small size, the structure of the siliconized layer is dense and smooth. The duty ratio has no effect on the structure of the siliconized layer. Both of them are composed of single phase NbSi2 and have the preferred orientation on the (110) and (200) planes. The Nb Si2 siliconized layer increases the high-temperature oxidation resistance of pure niobium.