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利用高分辨透射电子显微镜,系统研究了高J_c MTG-YBaCuO块材的结构特征和缺陷,并探讨了它们与材料临界电流密度J_c的关系。结果表明:在取向生长过程中大量出现平行ab面的高密度不均匀分布的间生型层状缺陷,可能是H平行ab面时有效的磁通钉扎中心。平行ab面的层状缺陷和{110}孪晶界一起,可导致外磁场下J_c的磁各向异性。
The structural characteristics and defects of high J_c MTG-YBaCuO bulk were systematically investigated by high-resolution transmission electron microscopy. Their relationship with the critical current density J_c was also discussed. The results show that a large number of interlaminar lamellar defects of high density and uneven distribution parallel to the ab plane appear during the growth of orientation, which may be the effective magnetic flux pinning center for H parallel ab plane. Layered defects in the parallel ab plane together with the {110} twin boundaries lead to the magnetic anisotropy of J_c in the external magnetic field.