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用穿通注入的空间电荷漂移二极管,可以获得高频负阻。对于理想结构,效率估计约为20％。这个器件适于低功率低噪声运用。
With punch through the space charge drift diode, you can get high-frequency negative resistance. For the ideal structure, the efficiency is estimated at about 20%. This device is suitable for low power and low noise applications.