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工 作 报 告 . 期 页Hj三甲基镓和砷烷制备砷化镓处延膜的工艺探索……………………………一(1)铝膜的电解腐蚀…………………………………………………………………一(9)MOS电路的低温淀积二氧化硅钝化…………………………………………一(13)多品硅膜的颗粒度与氧沽污………
WORK REPORT. Page Hj Trimethylgallium and arsine Processes for the Preparation of GaAs Wafers .................................... (1) Electrolytic Etching of Aluminum Films ... .............................................................. One (9) Low Temperature Deposition of MOS Circuits Silicon Dioxide Passivation .................................................. One (13) Multi-product silicon particle size and oxygen selling .........